SiC Power Device Physicist at Wolfspeed, Inc. – Durham, North Carolina

Wolfspeed, Inc.

Durham, North Carolina
Full time
Category: Full time | Full time | Full time
Type: Full time
Requisition ID: 26-129

At Wolfspeed, we do amazing things in a human way.

We know that the achievements of our organization are due to the passion, hard work and creativity of our employees. We celebrate different perspectives to foster excellence across our organization, and our goal is to make diversity a foundation of what we do. We are proudly building an environment where you can bring your authentic self to work.

• Enjoy doing things that people say can’t be done? Innovation is at the center of everything we do.
• Hate red tape? We remove roadblocks instead of creating them.
• Working parent? We provide childcare assistance and paid parental leave.
• Student? We offer continuing education assistance.
• Looking for community? There are many ways to get involved, from Employee Resource Groups to local outreach.

Here’s the Gist

In this position within Wolfspeed’s Power Device Technology Development department, you will be leading SiC power device development projects, with an emphasis on fundamental understanding of device physics and the effects of materials properties on SiC power device behaviors. You will be participating in many aspects of silicon carbide power device development, with a focus on metal-oxide semiconductor (MOS) dielectric and interface properties. A better understanding in these areas will provide deeper insights into the device behavior and ultimately lead to optimized and improved device properties. MOS related reliability studies will also be performed in this role.

The Day-to-Day:

• Lead development efforts focused on improving key aspects of next generation Silicon Carbide power devices.
• Detailed characterization of commercial SiC power device products to gain deeper insight into SiC power device operations
• Design, fabrication, and characterization of advanced test structures for SiC and MOS-related parameter extraction.
• Provide insights to others in the Device Design and Process Development teams and contribute to next generation device performance optimization.
• Provide data for TCAD and SPICE model calibration, improving accuracy of the predictive device and circuit simulations.
• Prepare technical presentations and papers for internal meetings, as well as external conferences and journals for demonstration of technology leadership.

This Job is Right for You if You Have (Minimum Requirements):

• Ph.D. degree in Electrical Engineering, Solid State Physics, or closely related area
• Strong understanding of MOS interface traps and near interface oxide traps
• Working knowledge of properties of dielectric layers and metal layers
• Strong understanding of semiconductor devices, device fabrication processes and materials characterization methods
• Excellent analytical and problem-solving skills
• Excellent communications and presentations skills
• Design of experiments and data analysis skills
• Experience in nonconventional devices and/or materials is desired

This role may require additional duties and/or assignments as designated by management.

To put it legally – Wolfspeed is an equal opportunity employer.

We recruit, employ, train, compensate and promote regardless of race, sex, religion, color, national origin, disability, age, veteran status, gender identity, sexual orientation and other protected status as required by law.

We are an equal opportunity employer and all qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, national origin, disability status, protected veteran status, or any other characteristic protected by law.